1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter 1. source 2. drain 3. gate 1 2 3 1gate 2drain 3source 2SK1960 features gatecanbedrivenby1.5v low on resistance r ds(on) =0.8 max.@v gs =1.5v,i d =0.1a r ds(on) =0.2 max.@v gs =4.0v,i d =1.5a absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 16 v gate to source voltage v gss 7 v i d 3.0 a i dp 6.0 a power dissipation p d 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =16v,v gs =0 100 a gate leakage current i gss v gs = 7v,v ds =0 3.0 a gate to source cutoff voltage v gs(off) v ds =3v,i d =1ma 0.5 0.8 1.1 v forward transfer admittance y fs v ds =3v,i d =1.5a 2.0 s v gs =1.5v,i d =0.1a 0.35 0.8 v gs =2.5v,i d =1.5a 0.17 0.3 v gs =4.0v,i d =1.5a 0.12 0.2 input capacitance c iss 370 pf output capacitance c oss 320 pf reverse transfer capacitance c rss 115 pf turn-on delay time t d(on) 70 ns rise time tr 200 ns turn-off delay time t d(off) 150 ns fall time t f 200 ns v ds =3v,v gs =0,f=1mhz i d =1.5a,v gs(on) =3v,r l =2 ,v dd =3v,r g =10 drain to source on-state resistance r ds(on) 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type smd type smd type product specification
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